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APTGT300U170D4G Single switch Trench + Field Stop IGBT(R) Power Module VCES = 1700V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M6 connectors for power - M4 connectors for signal * High level of integration 1 1 3 5 2 2 4 5 3 Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 530 300 600 20 1470 600A@1650V Unit V March, 2006 1-5 APTGT300U170D4G - Rev 1 A V W Reverse Bias Safe Operation Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com APTGT300U170D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A R G = 4.7 VGE = 15V Tj = 125C VBus = 900V IC = 300A Tj = 125C R G = 4.7 Test Conditions VR=1700V IF = 300A VGE = 0V Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ 2.0 2.4 5.8 Max 1 2.4 6.4 400 Unit mA V V nA 5.2 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Min Typ 25 0.9 280 100 750 100 330 100 900 200 115 Max Unit nF ns ns mJ 95 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC forward current Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge Min 1700 Typ Max 750 1000 Unit V A A IF = 300A VR = 900V di/dt =3500A/s APT website - http://www.advancedpower.com 2-5 APTGT300U170D4G - Rev 1 March, 2006 300 1.8 1.9 35 70 410 520 75 125 2.2 V mJ ns C APTGT300U170D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 3500 -40 -40 -40 3 1 Min Typ Max 0.085 0.13 150 125 125 5 2 420 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g D4 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTGT300U170D4G - Rev 1 March, 2006 APTGT300U170D4G Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 600 500 T J=25C 600 500 IC (A) TJ = 125C V GE=19V VGE=13V 400 300 200 100 0 0 400 IC (A) T J=125C VGE=15V 300 200 100 0 VGE=9V 1 2 VCE (V) 3 4 0 1 2 3 VCE (V) 4 5 600 500 400 Transfert Characteristics 300 T J=25C Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 4.7 TJ = 125C Eon 250 E (mJ) T J=125C 200 150 100 IC (A) 300 200 100 0 5 6 7 8 V GE (V) Switching Energy Losses vs Gate Resistance 350 300 250 VCE = 900V VGE =15V IC = 300A T J = 125C TJ=125C Eoff Er 50 0 9 10 11 0 100 200 IC (A) Reverse Bias Safe Operating Area 700 600 Eon 300 400 500 500 IC (A) 400 300 200 VGE=15V T J=125C RG=4.7 E (mJ) 200 150 100 50 0 0 Eoff Er 100 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.3 0.9 IGBT 0.5 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT300U170D4G - Rev 1 March, 2006 0.7 APTGT300U170D4G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 25 20 15 10 5 0 0 60 120 180 240 IC (A) 300 360 420 ZCS ZVS VCE =900V D=50% RG=4.7 TJ =125C TC=75C Forward Characteristic of diode 600 500 T J=25C 400 IF (A) 300 200 100 0 0 0.5 1 1.5 V F (V) 2 2.5 3 T J=125C T J=125C hard switching maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 0.7 0.5 Diode 0 0.00001 rectangular Pulse Duration (Seconds) APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT300U170D4G - Rev 1 APT reserves the right to change, without notice, the specifications and information contained herein March, 2006 |
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